Methodology for Testing Key Parameters of Array-Level Small-Area Hafnium-Based Ferroelectric Capacitors Using Time-to-Digital Converter and Capacitance Calibration Circuits
Hafnium-based ferroelectric memories are a promising approach to enhancing integrated circuit performance, offering advantages Door Protectors such as miniaturization, compatibility with CMOS technology, fast read and write speeds, non-volatility, and low power consumption.However, FeRAM (Ferroelectric Random Access Memory) still faces challenges r